This technology concerns an electronic device designed to function correctly even in environments where ionizing radiation is present. The device is able to compensate for the effects caused by ionization of the material it is made of.

The light sensors made of semiconducting materials are sensitive to both light radiation and direct ionization of the material itself. These two signals add up within the detector and, in most cases, cannot be distinguished. In environments characterized by a high radioactive background, the contribution due to direct ionization becomes predominant, interfering with the detection of the optical signal. This compromises the reliability of the detector, rendering it effectively unusable under such conditions.
The patented technology allows to overcome these problems, improving the accuracy, reliability and resistance of the optical detection systems, resulting in better and more stable performance even in difficult conditions.
INFN
IT 102025000010053
Detectors
P_24.015
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