{"id":4544,"date":"2025-07-01T14:30:53","date_gmt":"2025-07-01T12:30:53","guid":{"rendered":"https:\/\/web.infn.it\/TechTransfer\/portfolio_page\/method-for-making-a-diode-radiation-sensor-with-carbon-incorporation\/"},"modified":"2026-01-27T14:29:56","modified_gmt":"2026-01-27T13:29:56","slug":"method-for-making-a-diode-radiation-sensor-with-carbon-incorporation","status":"publish","type":"portfolio_page","link":"https:\/\/web.infn.it\/TechTransfer\/en\/portfolio_page\/method-for-making-a-diode-radiation-sensor-with-carbon-incorporation\/","title":{"rendered":"Method for making a diode radiation sensor with carbon incorporation"},"content":{"rendered":"

[vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column][vc_raw_html]W3dwc2VvX2JyZWFkY3J1bWJd[\/vc_raw_html][vc_empty_space][vc_column_text]<\/p>\n

Method for making a diode radiation sensor with carbon incorporation<\/h1>\n

[\/vc_column_text][vc_empty_space][\/vc_column][\/vc_row][vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column width=”2\/3″][vc_empty_space][vc_column_text]The technology concerns the field of diode sensors, with particular reference to the radiation sensors. In particular, it finds application especially in diode radiation sensors that include one or more diodes with a charge multiplication structure, designed to operate in a linear multiplication regime.[\/vc_column_text][vc_empty_space][vc_single_image image=”4545″ img_size=”full” qode_css_animation=””][vc_empty_space][vc_column_text]<\/p>\n

How does it work?<\/span><\/h3>\n

[\/vc_column_text][vc_empty_space][vc_column_text]The method concerns the construction of a diode sensor for detecting radiations. It is started with a semiconductor material, called a substrate, which has two surfaces: one front and one back. Near the front surface a first layer is created with a certain type of controlled impurity (doping), while deeper down a second layer is formed with a type of impurity opposite to the first. Before making these two layers, a third layer enriched with carbon in a precise quantity is inserted into the substrate. This step improves the characteristics of the sensor, making it more robust and reliable in detecting radiations.[\/vc_column_text][vc_empty_space][vc_column_text]<\/p>\n

Applications<\/span><\/h3>\n

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