{"id":4556,"date":"2025-05-15T10:35:24","date_gmt":"2025-05-15T08:35:24","guid":{"rendered":"https:\/\/web.infn.it\/TechTransfer\/portfolio_page\/integrated-ionizing-radiation-and-ionizing-particle-sensor\/"},"modified":"2026-01-27T14:51:29","modified_gmt":"2026-01-27T13:51:29","slug":"integrated-ionizing-radiation-and-ionizing-particle-sensor","status":"publish","type":"portfolio_page","link":"https:\/\/web.infn.it\/TechTransfer\/en\/portfolio_page\/integrated-ionizing-radiation-and-ionizing-particle-sensor\/","title":{"rendered":"Integrated ionizing radiation and ionizing particle sensor"},"content":{"rendered":"

[vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column][vc_raw_html]W3dwc2VvX2JyZWFkY3J1bWJd[\/vc_raw_html][vc_empty_space][vc_column_text]<\/p>\n

Integrated ionizing radiation and ionizing particle sensor<\/h1>\n

[\/vc_column_text][vc_empty_space][\/vc_column][\/vc_row][vc_row css_animation=”” row_type=”row” use_row_as_full_screen_section=”no” type=”full_width” angled_section=”no” text_align=”left” background_image_as_pattern=”without_pattern”][vc_column width=”2\/3″][vc_empty_space][vc_column_text]The technology concerns a device for detecting radiation from ionizing particles. In particular, the invention refers to a fully depleted, integrated semiconductor sensor that uses reverse-biased PIN diodes to collect charge carriers generated by the impact of radiations or ionizing particles.[\/vc_column_text][vc_empty_space][vc_single_image image=”4557″ img_size=”full” qode_css_animation=””][vc_empty_space][vc_column_text]<\/p>\n

How does it work?<\/span><\/h3>\n

[\/vc_column_text][vc_empty_space][vc_column_text]The described technology concerns the realisation of a semiconductor sensor for detecting radiations and\/or ionizing particles.<\/p>\n

The sensor is characterized by a polarisation electrode located on the rear side of the device and by a junction also located on the rear side, which allows the semiconductor substrate to be completely depleted. This depletion is extended up to the charge carrier collection regions, each connected to a corresponding collection electrode. These electrodes collect the carriers generated in the substrate as a result of the interaction with ionizing radiation. <\/p>\n

The sensor described comprises an intermediate semiconductor layer, formed on the substrate, with a higher doping concentration than that of the substrate itself, but with the same type of doping. Within this intermediate layer, doped regions of opposite type are buried which are separated from each other and whose function is to shield the surface regions in which the readout circuits are integrated.[\/vc_column_text][vc_empty_space][vc_column_text]<\/p>\n

Applications<\/span><\/h3>\n

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