Magnetron Sputtering

Schematic description of a magnetron sputtering process
Schematic description of a magnetron sputtering process in down-top configuration: in a vacuum chamber inert gas plasma (Ar) is created when a difference in potential is applied between the cathode (the material to be deposited) and the substrate (anode). The positive ions of the inert gas are accelerated toward the cathode. When the ions collide with the atoms of the sputtering target, the energy transfer causes the detachment of some atoms, which are then deposited on the substrate. Magnetron sputtering is characterized by elevated plasma use efficiency due to its magnetic confinement.
Example of plasma during the sputtering process of Molybdenum
Example of plasma during the sputtering process of Molybdenum.
Target Examples
Target Examples