Enhanced integrated circuit for driving high-speed links in radiation-hard applications

The subject of the invention is an enhanced integrated circuit for driving high-speed links in radiation-hard applications, for example in space applications, high-energy physics, and nuclear medicine, where circuits and electronic systems are affected by issues mainly related to Single Event Effects, or SEE, and degradation due to Total Ionizing Dose, or TID.

How does it work?

Integrated circuits designed for radiation-hard (or rad-hard) applications are subject to malfunction and performance deterioration due to interactions between radiation and the devices that make up the circuit. These issues mainly arise from Single Event Effects (SEE) and/or degradation caused by Total Ionizing Dose (TID).

The technology covered by the patent has enabled the creation of an enhanced integrated circuit capable of efficiently mitigating radiation-induced deterioration effects, particularly concerning SEE and TID. Additionally, the developed integrated circuit allows for a significant reduction in occupied space and energy consumption, and it can autonomously restore its functionality in case of performance degradation due to SEE or TID.

Applications

• Space sector;
• Nuclear Medicine;
• Electronics.

Advantages

• The enhanced integrated circuit is capable of mitigating deterioration effects caused by radiation impacting the circuit, particularly both SEE and TID;
• It has high robustness;
• Reduction of non-essential space and/or energy dissipation;
• Automatic restoration of its functionality in case of blockage due to TID.