The technology is positioned in the field of diode sensors, with particular reference to radiation sensors. More specifically, it is applied in radiation sensors based on diodes equipped with charge multiplication structures, powered to operate in a linear multiplication regime.

The invention concerns a method for creating diode radiation sensors that are more resistant to the harmful effects of radiation. The method involves creating doped semiconductor layers using a compensation technique, by introducing two types of dopants with opposite charges into the same area of the substrate. This compensation increases the dopant density, reducing sensor degradation and maintaining stable diode gain. The process introduces only a minimal modification to traditional manufacturing methods, keeping costs low and production simple.
INFN and FBK
IT 102022000003359
Detectors
P_21.069
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