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Method for executing a radiation sensor

The technology is positioned in the field of diode sensors, with particular reference to radiation sensors. More specifically, it is applied in radiation sensors based on diodes equipped with charge multiplication structures, powered to operate in a linear multiplication regime.

How does it work?

The invention concerns a method for creating diode radiation sensors that are more resistant to the harmful effects of radiation. The method involves creating doped semiconductor layers using a compensation technique, by introducing two types of dopants with opposite charges into the same area of the substrate. This compensation increases the dopant density, reducing sensor degradation and maintaining stable diode gain. The process introduces only a minimal modification to traditional manufacturing methods, keeping costs low and production simple.

Applications

  • Industrial applications;
  • Research;
  • Nuclear Medicine.

Advantages

  • Increased quantity of dopant;
  • Reduction of sensor degradation;
  • Increased gain;
  • Reduction of the dopant deactivation effect.

ADDITIONAL DETAILS

PATENT OWNERS

INFN and FBK

PRIORITY NUMBER

IT 102022000003359

TECHNOLOGY SECTOR

Detectors

TT CODE

P_21.069

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