DoTSiC

Embedded dosimetric and microdosimetric system based on two-stage silicon carbide detection in a telescopic configuration (also called ΔE-E) with two stages placed in sequence and able to provide, for each incident particle, information on the energy lost (in the first stage) and on the total kinetic energy (in the second stage). The two stages are integrated into a “monolithic” structure, e.g., within a single device with a common anode.

Silicon Carbide is a semiconductor with unique chemical/physical properties that make it ideal for hardening and protective coatings, in optoelectronics and sensor technology. It is actually the most promising alternative to Silicon for high-power/high-frequency electronics with low power consumption, even for operating under extreme conditions (high temperatures, huge radiation fluxes, aggressive chemicals).

Its biocompatibility also opens up new scenarios for applications in the biomedical field.