The invention refers to semiconductor devices for detecting ionizing radiation based on a resistive read-out system with metal electrodes, such that signal propagation to reading electrodes far from the point of impact is prevented.

The invention refers generally to semiconductor devices for detecting ionizing radiation based on the resistive read-out principle. Devices of this type essentially work by producing an electrical signal when the ionizing radiation passes through them. This signal is then read by a read-out electronics suitably connected to an electrode. The devices commonly used have several limitations, including: (i) the initial signal generated by a single event is split into a multiplicity of signals of lesser intensity, (ii) by splitting among many reading pads, the signal propagates over a wide surface of the detector: this makes it likely that two or more signals, initially distant, will propagate and overlap, and (iii) the number of reading electrodes affected by the event of a single incident particle changes depending on the point of impact.
The invention thus consists of a semiconductor device for radiation detection based on the resistive read-out design, in which the reading electrodes are shaped in such a way that the signal propagates over a limited number of electrodes.
INFN
IT 102021000011444
Detectors
P_20.136
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