This design makes it possible to avoid distortions in the reconstruction of the impact point of the incident particle which are typical of detectors using the resistive reading method. The use of variable resistivity resistors positioned between the reading electrodes eliminates distortions owing to an incorrect charge splitting among the reading electrodes and enables excellent spatial resolution across the entire pixel surface.

The RSD-type silicon detectors, “resistive silicon detectors”, potentially have an excellent spatial resolution over the entire surface of the pixel. However, owing to the charge splitting mechanisms among the electrodes, the reconstruction of the impact point is distorted.
This patent goes beyond the state of the art by using variable resistivity resistors. This modification makes the charge splitting process uniform and eliminates distortions in the reconstruction of the position of the impact point.
INFN
IT 102022000002993
Equipment
P_21.134
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